GlobalFoundries and Navitas Semiconductor Partner to Accelerate US GaN Technology and Manufacturing for AI Datacentres and Critical Power Applications.
GlobalFoundries (GF) and Navitas Semiconductor have announced a long term strategic partnership to accelerate United States based gallium nitride (GaN) technology and manufacturing, targeting the soaring demand for high efficiency power solutions across AI datacenters, performance computing and critical energy infrastructure. The companies said the collaboration will support customers seeking a secure, scalable and domestically anchored GaN supply chain.
Under the agreement, GF will manufacture next generation GaN devices at its Burlington, Vermont facility, leveraging the site’s expertise in high voltage GaN on silicon processes. Navitas will contribute its long established GaN design and device leadership, built through deployments in mobile charging, computing, electric vehicles, industrial systems and energy storage. Development is expected to begin in early 2026, with volume production slated for later that year.
GF CEO Tim Breen said the partnership strengthens US semiconductor leadership while enabling advanced power solutions required for AI and industrial innovation. Navitas CEO Chris Allexandre added that demand for GaN is rising sharply in high power markets, making domestic manufacturing essential for both national security and customer assurance.
The alliance aims to deliver higher efficiency and greater power density for next generation compute and energy platforms, while supporting national goals for decarbonization and supply chain resilience. By uniting GF’s large scale production capabilities with Navitas’ technology leadership, the companies expect to accelerate GaN adoption in mission critical applications across data, energy and industrial sectors.
