New IGTO(t) technology boosts efficiency, cuts losses 30%, and enhances reliability for next-generation high-voltage energy infrastructure worldwide.
Hitachi Energy and Pakal Technologies have joined forces to drive shared value and support sustainable growth.
Under this partnership, Hitachi announced plans to add Pakal Technologies’ groundbreaking Insulated Gate Turn-Off (Thyristor), IGTO(t), silicon power switch into its portfolio of market-leading high-voltage power modules, beginning with devices used in essential applications such as rail, renewables, energy storage, AI, and data center infrastructure.
The partnership aims to improve daily efficiency across energy infrastructure. Together, the companies plan to develop high-performance ≥3.3 kV power semiconductor modules for Hitachi Energy’s global customers. These modules will deliver better performance, lower operating costs, and improved long-term reliability for critical electrification projects.
The IGTO(t) is the first major high-voltage silicon power semiconductor innovation since the IGBT was introduced in the 1980s. It reduces conduction losses by 30% at high current and high temperatures compared to IGBT, while still being compatible with existing module designs.
