Increasing flexibility for EVs, renewables, and AI, ROHM and Infineon partner on compatible SiC power packages.
ROHM and Infineon Technologies AG have signed a Memorandum of Understanding (MoU) to collaborate on silicon carbide (SiC) power semiconductor packages, aiming to offer customers greater design flexibility and sourcing options for next-generation applications.
The partnership will allow each company to act as a second source for selected SiC device packages, ensuring compatibility and interchangeability for customers. This move is expected to benefit industries such as electric vehicle on-board chargers, photovoltaics, energy storage systems, and AI data centres by simplifying procurement and reducing design complexity.
As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual and H-DPAK packages. These packages feature a uniform height of 2.3 mm, improving board space utilisation and power density, while lowering system cooling costs. Infineon, in turn, will incorporate ROHM’s DOT-247 half-bridge package, expanding its Double TO-247 portfolio. ROHM’s DOT-247, with its integrated dual-package design, delivers 2.3 times higher power density compared with standard TO-247, while cutting thermal resistance by 15% and inductance by 50%.
Executives from both companies hailed the collaboration as a milestone. Dr Peter Wawer, Division President, Green Industrial Power at Infineon, said the alliance would accelerate the adoption of SiC devices and support more energy-efficient designs to drive decarbonisation. Dr Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM, added that the partnership would broaden solution offerings, increase customer satisfaction and shape the future of power electronics.
The companies also signalled plans to extend their cooperation into other wide-bandgap technologies such as gallium nitride (GaN), reinforcing their commitment to energy efficiency and innovation.
