Samsung and AMD are collaborating on advanced memory technologies to cater AI and data centre workloads as the memory bandwidth and power efficiency becomes a critical resource.
Samsung Electronics and AMD have signed an MoU to expand their partnership on next-generation AI memory and computing technologies.
Under the MoU, Samsung will supply HBM4 memory for AMD’s next-generation Instinct MI455X GPUs which are designed as AI accelerators, along with DRAM solutions for its upcoming EPYC CPU ‘Venice’, both of which will be deployed together in large-scale AI systems such as AMD’s Helios platform.
The signing ceremony was held in the presence of AMD’s Chair and CEO Dr. Lisa Su and Samsung Electronics’ Vice Chairman & CEO Young Hyun Jun at Samsung’s chip manufacturing complex in Pyeongtaek, Korea.
Addressing the development, Dr. Lisa Su, Chair and CEO of AMD said “We are thrilled to expand our work with Samsung, bringing together their leadership in advanced memory with our Instinct GPUs, EPYC CPUs and rack-scale platforms.”
Dr. Lisa Su, Chair and CEO, AMD
Samsung’s HBM4
The DRAM is built on 6th-generation 10-nm-class DRAM process (1c) and a 4nm logic base die and claims speeds up to 13 Gbps and bandwidth of 3.3 TB/s
AMD Instinct MI455X
The GPU is expected to handle high-performance systems, handling AI model training and inference.
“Samsung is uniquely positioned to deliver unrivalled turnkey capabilities that support AMD’s evolving AI roadmap.” said Young Hyun Jun, Vice Chairman & CEO of Samsung Electronics.
Young Hyun Jun, Vice Chairman & CEO, Samsung Electronics
As part of their collaboration, Samsung and AMD will also work together on high-performance DDR5 memory optimised for the 6th Gen AMD EPYC CPUs. The companies aim to deliver DDR5 memory solutions for systems built on the AMD Helios rack-scale architecture.
Both companies will also explore foundry partnership, indicating Samsung could manufacture future AMD products.
