Samsung, Micron Exit DDR4, Taiwan Steps In

DDR4 era ending? Samsung and Micron cut output, followed by SK Hynix. Taiwanese firms are gaining momentum as DDR5 and HBM take centre stage amid tariff and supply chain shifts.

Samsung and Micron are winding down legacy DDR4 production, marking a major change in the memory industry. According to Commercial Times, Samsung will stop producing 8GB DDR4 modules using 1y and 1z nm technology from April 2025. Final customer orders must be placed by June, with shipments ending in December.

Micron has also begun phasing out older DDR4 server modules. SK Hynix is following suit, reducing its DDR4 output to just 20 per cent of its memory production. These moves reflect an industry-wide pivot toward newer technologies like DDR5 and high-bandwidth memory (HBM).

As supply tightens, especially for 1y nm 16GB DDR4 chips, a report by TrendForce has predicted that OEMs may face sourcing challenges. Samsung is still offering some DDR4 chips, but supply is increasingly limited.

This has opened opportunities for Taiwanese memory suppliers. Companies like Nanya Technology and Winbond are expected to benefit as module makers look for alternative sources.

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Meanwhile, DRAM producers prioritise DDR5 modules built on advanced 1a and 1b nm processes. These are being directed to top PC manufacturers such as Dell, HP, ASUS, and Acer.

In terms of pricing, the market remains volatile. Stockpiling ahead of U.S. “reciprocal tariffs,” set for April 9th with a 90-day grace period, has supported recent price increases. Analysts at TrendForce warn that while prices for DRAM and NAND Flash are rising now, the boost may not last.

Much of the demand from US buyers has already been brought forward, distorting typical seasonal patterns. With supply shifts and geopolitical uncertainty, the longer-term outlook for DRAM remains uncertain.

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Shubha Mitra
Shubha Mitra
Shubha Mitra is an Assistant Editor at EFY, keenly interested in policies and developments shaping the electronics business.

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