New IGBT devices provide reduced switching losses and conduction losses thereby improving efficiency.
Toshiba’s new sixth-generation IGBT’s are now available from TTI. Sixth-generation IGBT technology offers improved switching loss / conduction loss trade off for increased efficiency and improved performance making the new devices suitable for a variety of hard switching applications, including motor drives, solar inverters and uninterruptible power supplies.
The technology combines a finer pattern design and a thinner ‘punch through’ wafer process than the previous generation, as well as a highly-optimised vertical design. As a result, devices based around the new process are able to provide lower VCE(sat) conduction losses and reduced Eon and Eoff switching losses.
New products featuring the sixth-generation technology offer current ratings of 15A (GT15J341), 20A (GT20J341), 30A (GT30J341) and 50A (GT50J342). Each of the parts integrates both the IGBT and a fast reverse recovery diode connected between emitter and collector, in a single compact package. All feature a typical VCE(sat) of 1.5V at the nominal current. The 15A and 20A parts are supplied in a TO-220SIS package, while the 30A and 50A devices are available in a TO-3P(N) (TO-247 equivalent) package.
Efficiency and performance improvements offered by the new devices can be demonstrated by comparing the GT50J342 50A device and the GT30J341 30A device with their predecessors. At TC=150C with a current of 50A, the GT50J342 provides a reduction in VCE(sat) of 32% and respective reductions in Eon and Eoff of 13% and 26%. This reduces overall losses by 24% (DC bus voltage 300V and IGBT switching frequency of 20KHz).
At TC=150C with a current of 30A, the GT30J341 provides a reduction in VCE(sat) of 30% and respective reductions in Eon and Eoff of 12% and 33%. This reduces overall losses by 26% (DC bus voltage 300V and IGBT switching frequency of 20KHz), says the company.
