Electronics and semiconductor manufacturer STMicroelectronics has announced that its advanced BiCMOS55SiGe technology has been selected by the European E3Network R&D initiative for developing energy-efficient, high-capacity transmission systems in next-generation mobile networks.
The E3NETWORK project leverages the integration and power advantages of ST’s BiCMOS55SiGe technology delivering Hetero junction Bipolar Transistors (HBT) with Ft up to 320GHz in 55nm lithography. This technology allows the integration of a high-frequency analog section with high-performance, dense digital blocks such as logic, AD/DA converters, and memories.
E3Network is designing an integrated E-band transceiver using ST’s BiCMOS55 technology for front haul and backhaul infrastructure, which enables digital multi-level modulations, pencil-beam transmissions, and data rates above 10Gbps. The pencil-beam property facilitates a high degree of frequency reuse in the deployment of backhaul and front haul links, while preserving the spectrum efficiency over the millimeter-wave interval.
