Rapid growth of high-bandwidth memory for AI hardware threatens to squeeze global supply of standard DRAM.
High-bandwidth memory (HBM) could consume nearly 30 per cent of dynamic random access memory (DRAM) chipmakers’ total wafer capacity by 2027, up from approximately 20 per cent today, according to statements made by a senior Samsung Electronics executive reported by Reuters.
Speaking on Tuesday, Samsung Electronics Executive Vice President Kim Taewoo cautioned that because HBM and standard DRAM rely on the same primary wafer manufacturing infrastructure, the rapid acceleration of HBM production risks tightening the global supply of conventional DRAM chips.
Comprising vertically stacked silicon chips that allow processors to access data at extreme speeds, HBM has become an essential hardware component for enterprise artificial intelligence computing. The specialized market is currently dominated by South Korean manufacturers SK Hynix and Samsung, alongside US-based Micron Technology.
