- Intel’s Fab 9 stands as Intel’s inaugural co-located high-volume advanced packaging facility
- The pivotal development at Fab 9 will propel Intel’s future innovations in advanced packaging technologies
Intel has announced Fab 9, its cutting-edge factory in Rio Rancho, New Mexico. This inauguration is a part of Intel’s commitment of $3.5 billion investment to equip its New Mexico operations to manufacture advanced semiconductor packaging technologies.
It also includes Intel’s breakthrough 3D packaging technology, Foveros, which offers flexible options for combining multiple chips optimised for power, performance and cost.
“Today, we celebrate the opening of Intel’s first high-volume semiconductor operations and the only U.S. factory producing the world’s most advanced packaging solutions at scale. This cutting-edge technology sets Intel apart and gives our customers real advantages in performance, form factor and flexibility in design applications, all within a resilient supply chain. Congratulations to the New Mexico team, the entire Intel family, our suppliers, and contractor partners who collaborate and relentlessly push the boundaries of packaging innovation,” said Keyvan Esfarjani, Intel executive vice president and chief global operations officer.
The Fab 9 and Fab 11x facilities in Rio Rancho portray the initial operational site for mass production of Intel’s 3D advanced packaging technology.
Intel’s Fab 9 stands as Intel’s inaugural co-located high-volume advanced packaging facility, signifying the culmination of an end-to-end manufacturing process that enhances the supply chain’s efficiency from initial demand to the ultimate product. This pivotal development at Fab 9 will propel Intel’s future innovations in advanced packaging technologies. In an era of semiconductor evolution characterised by the integration of multiple “chiplets” within a single package, advanced packaging techniques like Foveros and EMIB (embedded multi-die interconnect bridge) offer a swifter and more cost-effective avenue to reach the ambitious goal of fitting 1 trillion transistors onto a single chip and extending Moore’s Law beyond 2030.
Foveros, Intel’s groundbreaking 3D advanced packaging technology, introduces an unprecedented approach where compute tiles are vertically stacked rather than placed side by side. This innovation permits Intel and its foundry partners to blend and match compute tiles efficiently for optimal cost-effectiveness and power efficiency and paves the way for remarkable advancements in semiconductor packaging.
“This investment by Intel underscores New Mexico’s continued dedication to bring manufacturing back home to America,” said Gov. Michelle Lujan Grisham. “Intel continues to play a key role in the state’s technology landscape and strengthen our workforce, supporting thousands of New Mexico families.”
