Taking smartphone storage solution to an entirely new level, Samsung Electronics on Wednesday announced that it has begun mass production of the first 512GB memory chip for next-generation mobile devices.
Utilising Samsung’s latest 64-layer, 512-GB V-NAND chips, the new 512GB Universal Flash Storage (eUFS) memory chip provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets, the company said in a statement.
According to IANS, “The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro-SD cards,” said Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics.
“By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world,” Jaesoo added.
