US Allocates $389M in R&D Grants for Power Semiconductors

Federal funding targets four technology firms to advance next-generation semiconductor materials and fusion power applications.

The US Commerce Department has announced plans to award $389 million in research and development grants to four technology companies focused on power semiconductor devices and critical raw materials. The department has signed non-binding letters of intent for the awards, which Commerce Secretary Howard Lutnick stated would accelerate domestic semiconductor innovation while strengthening national energy resources.

Under the proposed allocations, fusion energy pioneer Helion is set to receive up to $175 million to develop high-voltage power semiconductors and advanced modules for fusion power generation. Commonwealth Fusion Systems will be awarded up to $85 million to develop radio-frequency plasma heating semiconductors, power electronics, and radiation-hardened components.

Additionally, Vertical Semiconductor has been provisionally granted up to $73 million to advance its vertical gallium nitride power chips for artificial intelligence data centre racks. Industrial minerals provider Sibelco is slated to receive up to $56 million to improve purification processes for ultra-high-purity quartz, a vital material in chip manufacturing.

In exchange for the R&D funding, the US government will receive minority, non-controlling, and non-voting equity stakes in each of the recipient companies.

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Jaydeep Gadhavi
Jaydeep Gadhavi
Jaydeep Gadhavi is a journalist with EFY business focusing on EV as well as Semiconductor business news.

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