Navitas was selected following a competitive evaluation involving US silicon carbide technology companies
Navitas Semiconductor has been selected by the US Army to develop next-generation 10kV silicon carbide (SiC) insulated-gate bipolar transistors (IGBTs) under the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) programme.
The programme, sponsored by the Army Research Laboratory (ARL) under the US Army Combat Capabilities Development Command (DEVCOM), aims to develop and validate a domestic manufacturing process for ultra-high-voltage SiC power semiconductor devices through iterative design, fabrication, and testing.
Supported by the Joint Experimentation and Technology Accelerator (JETX), the ALATTIS programme will focus on 10kV SiC IGBTs and associated PiN diode technologies for high-power electronics used in defence and critical infrastructure applications.
Navitas was selected following a competitive evaluation involving US silicon carbide technology companies. The company said its experience in ultra-high-voltage SiC technology, defence-grade performance and reliability, and US-anchored manufacturing ecosystem were key factors in its selection.
Navitas’ GeneSiC portfolio currently spans voltage ratings from 650V to 6.5kV. The company said the ALATTIS programme will allow it to extend its SiC technology portfolio beyond MOSFETs into 10kV IGBTs.
“This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies,” said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas.
