March 20, 2015: Vishay Intertechnology, Inc. has recently introduced a new TrenchFET 20 V n-channel MOSFET designed to save space, decrease power consumption, and extend battery usage in wearable devices, smartphones, tablets, and solid-state drives. Offered in a chipscale MICRO FOOT package with an ultra-low 0.54 mm maximum height, the Vishay Siliconix Si8410DB provides the industry’s lowest on-resistance for any 20 V device in the compact 1 mm square footprint.
Optimised for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8410DB features extremely low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. Compared with the closest competing devices in the CSP 1 mm square package, these ratings represent an improvement of 26 per cent at 4.5 V, 32 per cent at 2.5 V, 35 per cent at 1.8 V, and 27 per cent at 1.5 V. Compared with devices in the DFN 1 mm square package, on-resistance is 32 per cent lower at 4.5 V, 40 per cent lower at 2.5 V, 48 per cent lower at 1.8 V, and 43 per cent lower at 1.5 V. The device’s low on-resistance, ratings down to 1.5 V, and ± 8 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for lithium ion battery-powered applications.
The Si8410DB offers an extremely low on-resistance per area of 30 mΩ-mm square — 28 per cent lower than the closest competing 20 V MOSFET in a 1 mm square plastic package — to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The combination of lower on-resistance and lower thermal resistance results in up to 45 per cent and 144 per cent lower temperature rise than the next-best devices in CSP and 1 mm square packages, respectively.
