KoCos is expanding semiconductor inspection beyond conventional dimensional measurement, including patented wafer-notch inspection and planned crystal-defect inspection.
As semiconductor structures become more complex, inspection must go beyond verifying wafer dimensions. Identifying defects in hard-to-reach areas and detecting flaws that could affect manufacturing yield are becoming increasingly important.
During discussions with EFY, Patrik Zube, Product Manager bei KoCoS Optical Measurement GmbH, said the company is moving beyond conventional dimensional measurement towards deeper inspection of wafer surfaces, edges and, eventually, the crystal structure itself.
Its existing inspection systems are designed for measurements below one micron, supporting high-volume measurements for tighter process control.
The company has developed patented light-sectioning technology to examine the inside of a wafer’s notch, an orientation mark that can be difficult to inspect. The system combines laser illumination with cameras positioned at specific angles to access areas that conventional inspection methods can struggle to reach. It can also be used to evaluate the edge-grinding process around the notch.
The company’s R&D focus over the coming years will include defect inspection of semiconductor crystals, using new parametric methods to extract better information.
This progression points to a broader change in what semiconductor inspection needs to accomplish. As measurement moves from wafer dimensions and accessible surfaces towards edges, structures, and eventually crystal defects, inspection becomes less about confirming specifications and more about finding problems before they affect manufacturing yield.
Stay tuned for the full interview.
