Friday, May 16, 2014: STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, and Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced the signing of a comprehensive agreement on 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.
The licensing accord provides customers with advanced manufacturing solutions from Samsung’s state-of-the-art 300mm facilities and assures the industry of high-volume production for ST’s FD-SOI technology. FD-SOI technology at 28nmdelivers faster, cooler, and simpler semiconductor devices to meet the continuing demand for higher-performance, lower-power systems-on-chips for next-generation electronic products, such as mobile and consumer applications.
The agreement, on 28nmFD-SOI technology, encompasses ST’s fully developed process technology and design enablement ecosystem.ST has already proven the speed-power and simplicity benefits of 28nm FD-SOI and continues to build design interest and momentum. The agreement complements ST’s advanced 28nm FD-SOI manufacturing capabilities at its 300mm facility in Crolles, France, ensuring a multi-source option for 28nm FD-SOI products and providing customers with the benefit of both Samsung’s and ST’s deep experience and comprehensive knowledge of high-volume manufacturing technology. The Samsung 28nm FD-SOI process will be qualified in early 2015 for volume production.
“Building upon the existing solid relationship between ST and Samsung within the framework of the International Semiconductor Development Alliance, this agreement further strengthens our cooperation by extending it to 28nm FD-SOI, while expanding the ecosystem and augmenting fab capacity for ST and the entire electronics industry. Moreover, the agreement confirms and strengthens further the business momentum that we have experienced on this technology during the past quarters through many customers and project engagements in our Embedded Processing Solutions segment” said Jean-Marc Chery, Chief Operating Officer, STMicroelectronics. “We foresee further expansion of the 28nm FD-SOI ecosystem, to include the leading EDA and IP suppliers, which will enrich the IP catalog available for 28nm FD-SOI.”
“We are pleased to announce this28nm FD-SOI collaboration with ST. This is an ideal solution for customers looking for extra performance and power efficiency at the28nm node without having to migrate to 20nm,” said Dr. Seh-WoongJeong, executive vice president of System LSI Business, Samsung Electronics. “28nm process technology is a highly productive process technology and expected to have a long life span based on well-established manufacturing capabilities. By adding FD-SOI to our technology portfolio, Samsung provides a full-spectrum of 28nm process offerings for our customers’ success.”
