Revolutionising power transfer, Infineon teams up with AWL-E to utilise GaN technology to boost efficiency and slash battery waste across industries.
Infineon Technologies has recently announced a partnership with Canada’s AWL-Electricity Inc., known for its power transfer technology. This collaboration merges Infineon’s advanced gallium nitride (GaN) technology with AWL-E’s power transfer system.
As part of the partnership, Infineon will supply AWL-E with its CoolGaN GS61008P product, facilitating the development of wireless solutions that address power challenges across various industries.
Infineon’s GaN transistors provide high efficiency, power density, and switching frequencies, allowing AWL-E to enhance system longevity, minimise downtime, reduce operating costs, and improve user convenience.
In the automotive sector, this technology elevates interior experiences and seat dynamics, while in industrial applications, it offers design freedom for automated guided vehicles and robotics. Furthermore, it enables sealed system designs, eliminating charging ports and helping to decrease global battery consumption.
Falk Herm from Infineon’s Power and Sensor Systems Division emphasised that the collaboration illustrates how GaN technology, operating at MHz frequencies, redefines the capabilities of power transistors, leading to greener and higher-performing products.
Francis Beauchamp-Verdon, Co-founder and VP of AWL-E, commented that Infineon embraces partnerships to tackle current power challenges and highlighted how Infineon’s GaN transistors have helped gain acceptance for their MHz power coupling systems.
Infineon is a unique player in the power semiconductor market, offering a diverse range of products, including silicon, silicon carbide (SiC), and gallium nitride (GaN) devices in various formats.
