Infineon, Stellantis Partner To Advance Next-Gen Vehicle Power

With a dedicated Joint Power Lab and secured supply agreements, the partnership is set to drive transformative advancements in EV performance, cost-effectiveness, and the overall driver experience.

Stellantis N.V. and Infineon Technologies AG announced a joint initiative to advance the power architecture of Stellantis’ electric vehicles (EVs). This partnership supports Stellantis’ goal of providing sustainable and accessible mobility solutions. As part of the collaboration, both companies have signed significant supply and capacity agreements focused on developing a new generation of EV power architecture.

The collaboration focuses on integrating advanced technologies to enhance vehicle efficiency, simplify wiring, and support intelligent power management. Smart power switches will replace traditional fuses, reducing the need for extensive wiring and enabling more intelligent management of vehicle power networks. Silicon carbide (SiC) semiconductors are another crucial component, as they standardise power modules, ultimately boosting electric vehicle performance, improving efficiency, and reducing costs. Microcontrollers will align with the vehicle’s zonal architecture, supporting a more streamlined and efficient electronic system that meets evolving automotive needs.

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The companies are also establishing a Joint Power Lab to create scalable, intelligent power architecture tailored to Stellantis’ software-defined vehicles. The collaboration focuses on driving substantial improvements in cost-effectiveness, energy efficiency, driver experience, and vehicle range. The companies have secured supply and capacity reservations for PROFET power switches and CoolSiC silicon carbide (SiC) semiconductors. With scalable production capacity, Infineon is well-prepared to meet the growing demand for semiconductor solutions in the automotive market.This collaboration marks a strategic move for both companies, combining Stellantis’ automotive expertise with Infineon’s semiconductor capabilities to drive advancements in EV technology and support the transition to more efficient and connected vehicles.

Maxime Picat, Stellantis’ Chief Purchasing and Supplier Quality Officer, emphasized that this collaboration aligns with the company’s Dare Forward 2030 strategy. He noted that the partnership secures essential semiconductor solutions for the company’s ongoing transition to electrified platforms. Peter Schiefer, President of Infineon’s Automotive Division, stated that the collaboration leverages Infineon’s expertise in automotive semiconductors, aiming to enhance vehicle efficiency and enable software-driven architectures that will shape future mobility. Infineon’s advanced manufacturing facilities, including the silicon carbide fab in Malaysia, the upcoming “Smart Power Fab” in Germany, and its joint venture with TSMC and other partners, position the company to meet growing demand for automotive semiconductors.

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Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.

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