Thursday, July 11, 2013: The major types of diodes available in the market include small signal, zener, transient protection, radio frequency (RF) and microwave diodes. There is a strong demand for multiple diodes in a single package because these save assembly time, reduce costs and improve reliability over individually packaged diodes.
Transistors, on the other hand, include FETs, MOSFETs, uni-junction and bipolar transistors. The new generations of chips have a greater number of transistors that are also smaller in size. As a result, these transistors can operate faster than their predecessors, allowing the chip to run faster.
In this section, we feature some of the new diodes and transistors launched in the last six months. However, companies like NXP, Epcos and Mitsubishi have not launched any new products during the period in review.
Model: NGTBxxN120IHRWG and NGTBxxN135IHRW, Brand: ON Semiconductor, Manufacturer: ON Semiconductor, USA
Launched in May 2013, the new high speed Field Stop II (FSII) IGBTs target high performance power conversion consumer appliance and industrial applications.
Key features
- Optimised switching and reduced conduction losses for induction heating and soft switching applications operating at medium frequencies of 15 kHz to 30 kHz
- With excellent ruggedness and superior on-state characteristics at high currents, these devices enable higher efficiency and lower system losses
- The family of devices is available in both 1200V and 1350V platform versions with current ratings of 20 A, 30 A and 40 A
Contact details: Paul Leonard, VP & GM, Power Discrete Products, Ph: (1) (602) 244-6600, paul.leonard@onsemi.com, www.onsemi.com
India distributors: Avnet India, Future Electronics, and RS Components & Controls (India) Ltd
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Model: RBE series, Brand: ROHM, Manufacturer: ROHM Semiconductor, Japan
Launched in March 2013, the RBE series of diodes offers improved current efficiency and the industry’s lowest forward voltage (VF), according to the company. Offered in a range of package sizes, from 1006 size and up, they are ideal for portable devices and sets that require greater miniaturisation.
Key features
- Reverse voltage (repetitive peak): 30 V
- Reverse voltage (DC): 20 V
- Average rectified forward current: 500 mA
- Forward current surge peak (60 Hz-1 cyc): 1 A
- Junction temperature: 125°C
- Storage temperature: -40 to +125°C
Contact details: Y Suresh, marketing engineer, Ph: 044-43520008, suresh@rohm.in www.rohm.com
India distributors: Arrow Electronics India Pvt Ltd, Digi-Key Corporation, Future Electronics, and RS Components & Controls (India) Ltd
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Model: uPA2766, Brand: Renesas, Manufacturer: Renesas Electronics Corporation, Japan
Launched in January 2013, µPA2766T1A is optimised for use in ORing FETs in power supply units for network servers and storage systems. These ORing FETs maintain high reliability for the server and storage systems.
Key features
- Delivers the industry’s lowest on-state resistance of 0.72 mΩ (typical value) for 30 V applications in a small 5 mm × 6 mm package
- Enables high-current control in a smaller package, contributing to power savings and the miniaturisation of the power units used for comparably large scale server and storage systems
- The 8-pin HVsSON package provides low package resistance because a metal plate is used to connect the FET die within the package, to the pins
Contact details: contact.india@renesas.com, sg.renesas.com
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Model: MBLS series, Brand: Vishay, Manufacturer: Vishay Intertechnology, USA
Launched in May 2013, the four new 1A miniature glass passivated single-phase bridge rectifiers in the surface-mount MBLS package feature a low typical height of 1.4 mm. Offering high reverse voltages up to 1000 V, the MBL104S, MBL106S, MBL108S, and MBL110S are ideal for AC/DC full-wave rectification in smartphone chargers.
Key features
- Maximum peak reverse voltage ratings of 400 V (MBL104S), 600 V (MBL106S), 800 V (MBL108S) and 1000 V (MBL110S)
- All four bridge rectifiers provide a high surge current capability of 30 A, low forward voltage drop of 0.95 V at 0.4 A, and a maximum junction temperature of +150ºC
- The rectifiers feature an MSL moisture sensitivity level of one, per J-STD-020, and an LF maximum peak of 260°C.
- Ideal for automated placement, the devices are compliant to RoHS Directive 2011/65/EU and are halogen-free, according to JEDEC JS709A standards
Contact details: Vinod Tarale, distribution sales manager, Ph: +91-80 3058-0060, vinod.tarale@vishay.com, www.vishay.com
India distributors: Arihant Electricals, Rajpal Enterprises, Arrow Electronics India Ltd, Avnet India Pvt Ltd, element14, TTI Electronics Asia Pte Ltd, Tomen Electronics India Pvt Ltd, WPG Electronics India Pvt Ltd, and Future Electronics Inc (Distribution) Pte Ltd
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Model: COOLiRFET, Brand: IR, Manufacturer: International Rectifier, USA
Launched in May 2013, the COOLiRFET MOSFETs deliver benchmark on-state resistance (Rds(on)) for heavy load applications including electric power steering (EPS), braking systems and other heavy loads on internal combustion engines (ICE) and micro hybrid vehicle platforms.
Key features
- Features IR’s proven Gen12.7 trench technology that delivers ultra-low Rds(on) in D2Pak-7P, D2Pak, DPak, TO-262, IPAK and TO-220 packages
- The benchmark D2Pak-7P AUIRFS8409-7P delivers Rds(on) max as low as 0.75 mOhm at 10 Vgs with a current rating of up to 240 A.
- Offers low conduction losses and robust avalanche performance to deliver higher efficiency, power density and reliability
- The new devices are AEC-Q101 qualified, which requires that there is no more than a 20 per cent change in Rds(on) after 1,000 temperature cycles of testing, and feature an environment-friendly, lead-free and RoHS-compliant bill of materials (BoM)
Contact details: Leena Jacob, sales support executive, Ph: +91-80 41142644, extn-101, ljacob1@irf.com, www.irf.com
India distributors: WT Microelectronics Singapore Pte Ltd, Arrow Electronics India Pvt Ltd, Avnet India Pvt Ltd, and Future Electronics
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Model: TO247-4, Brand: ST, Manufacturer: STMicroelectronics, Geneva
Launched in May 2013, the company claims that TO247-4 is the first MDmesh V Super-Junction MOSFET featuring a new package technology which increases the efficiency of power circuitry in equipment, such as white goods, televisions, PCs, telecom equipment, and server switched-mode power supplies. The TO247-4 package features an innovative internal construction implementing a Kelvin connection to the source. This connection bypasses the common source inductance of the main power connection, enabling up to 60 per cent of switching losses to be eliminated, and allowing designers to use higher switching frequencies that require smaller filtering components.
Key features
- High noise immunity, lowering susceptibility to Electro-Magnetic Interference (EMI)
- Increased voltage rating for greater safety margins
- High dv/dt capability for enhanced reliability
- 100 per cent avalanche tested, enabling use in rugged designs
Contact details: Ph: 0120-4006000, sumit.rai@st.com, www.st.com
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Model: FDMQ86530L, Brand: Fairchild Semiconductor, Manufacturer: Fairchild Semiconductor, USA
Launched in April 2013, FDMQ86530L 60V quad-MOSFET provides designers with an all-in-one package to help with critical design challenges like excessive heat generation in high-definition, compact, active bridge applications such as network cameras, which can cause image quality issues.
Key features
- Comprising four 60V N-Channel MOSFETs and utilising GreenBridge technology, the FDMQ86530L solution betters the conduction loss and efficiency of the conventional diode bridge, providing a 10-fold improvement in power dissipation
- Available in a thermally enhanced, space-saving 4.5mm×5.0mm MLP 12-lead package, the device eliminates the need for a heat sink, thus enabling a compact design that increases power conversion efficiency in 12V and 24V AC applications
Contact details: Rajesh K, sales manager, Ph: 080-40407202, rajesh.k@fairchild.com, www.fairchildsemi.com
India distributors: AV Concept Singapore Pte Ltd, Arrow Electronics India Pvt Ltd and Avnet India Pvt Ltd
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Model: Rapid, Brand: Infineon, Manufacturer: Infineon Technologies AG, Germany
Launched in March 2013, the fast recovery 650V Rapid 1 and Rapid 2 silicon diode families combine Infineon’s ultra-thin wafer manufacturing expertise for a low-loss vertical structure plus unique cell design.
Key features
- The Rapid 1 diode family has a 1.35V temperature-stable forward voltage (VF) to ensure lowest conduction losses and provide a soft recovery to keep EMI emissions to a minimum
- The devices are perfectly suited for power factor correction (PFC) topologies, typically found in major home appliances, like air conditioners and washing machines, as well as boost stages in photovoltaic inverters, which switch between 18 kHz and 40 kHz
- The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz. It offers both a low reverse recovery charge (Q rr) and reverse recovery time (t rr)
- Rapid 2 is targeted at PFC stages found in servers, telecom rectifiers, TV and laptop power adaptors, as well as welding machines.
Contact details: Ph: 080-30942000, india.sales@infineon.com, www.infineon.com
India distributors: AdvanIDe Inc, Altech Corporation, and Arihant Electricals
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Model: SR05 series, Brand: Littelfuse, Manufacturer: Littelfuse Inc, USA
Launched in April 2013, the SR05 series TVS diode arrays are designed to protect telecommunication and industrial equipment against electrostatic discharge and lightning-induced surge events.
The TVS diode arrays can safely absorb up to 25 A and repeated ESD strikes without performance degradation. The SR05 series devices’ extremely low dynamic resistance and clamping voltage levels ensure their ability to protect today’s small geometry chipsets from damaging transients. With very low capacitance from each I/O to ground, these devices provide robust protection, maintaining signal integrity and preventing data loss during transmission.
Key features
- Very low dynamic resistance (RDYN) of 0.3 Ω
- Low capacitance of 6 pF from I/O to GND
- Robust surge protection: lightning, IEC61000-4-5, 25 A (8/20 µs); peak pulse power, 450 W (8/20 µs)
- Enhanced ESD capability: IEC61000-4-2, ±30kV contact, ±30kV air
Contact details: Bharat Kapoor, marketing manager, Bkapoor@littelfuse.com, Ph: +91 9810835155, www.littelfuse.com
India distributors: Arrow Electronics India Private Ltd, BBS Electronics International Pvt Ltd, Digi-Key Corporation, element14, Future Electronics, and Millennium Semiconductors
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