The chipmaking giants target a shift to larger 12-inch photomasks to boost manufacturing productivity and lower advanced node costs.
ASML and Taiwan Semiconductor Manufacturing Company (TSMC) have unveiled a joint initiative to drive the semiconductor sector towards larger Extreme Ultraviolet (EUV) lithography photomasks.
The venture seeks to transition the industry from traditional six-inch masks to 12-inch formats. While chipmakers will initially deploy High (Numerical Aperture) NA EUV systems using six-inch masks, the adoption of 12-inch versions is expected to improve fabrication productivity, remove design stitching constraints, and reduce unit costs for leading-edge silicon.
“We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks,” said Christophe Fouquet, President and Chief Executive of ASML. He added that the larger format will help scanner output meet rising demand for smaller, faster, and more energy-efficient processors.
TSMC Chairman and Chief Executive Dr C.C. Wei highlighted the importance of sector-wide collaboration, noting that bringing together supply chain partners creates accessible, scalable advanced solutions.
TSMC plans to integrate ASML’s High NA technology into high-volume manufacturing for advanced process nodes starting in 2030, driven by the complex transistor designs required for artificial intelligence applications.
The collaborative effort aims to establish a 12-inch mask pilot line by 2031, laying the foundation for full 12-inch High NA lithography systems to enter commercial production by 2033.
