ROHM and TSMC are advancing electric vehicles with a new partnership focused on developing and producing cutting-edge gallium nitride power devices.
ROHM Co., Ltd. (ROHM) today announced a strategic partnership with TSMC to develop and mass-produce gallium nitride (GaN) power devices for electric vehicle applications. This collaboration combines ROHM’s device development technology with TSMC’s leading GaN-on-silicon process technology to address the increasing demand for high-voltage and high-frequency power devices, which offer significant advantages over silicon-based counterparts.
GaN power devices, traditionally used in consumer and industrial sectors like AC adapters and server power supplies, are recognized for their potential environmental benefits in automotive applications, including EV onboard chargers and inverters. TSMC is noted for its commitment to sustainability and green manufacturing and supports the expansion of GaN technology in these areas.
The partnership is an extension of previous collaborations between ROHM and TSMC, particularly in the adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN™ series. These devices are increasingly utilized in various consumer and industrial applications, including fast chargers like the Innergie “C4 Duo” by Delta Electronics.
Both companies emphasize the importance of reliable partnerships to bring such innovations to the market. ROHM aims to enhance the adoption of GaN in the automotive industry by providing comprehensive GaN solutions, including control ICs that optimise GaN performance. Meanwhile, TSMC and ROHM are committed to advancing GaN technology for automotive use, leveraging TSMC’s semiconductor manufacturing expertise and ROHM’s power device design skills to enhance GaN implementation in electric vehicles.
