Samsung plans to bring ASML’s High-NA EUV technology to DRAM mass production by 2028, while larger photomasks could help improve fab productivity and reduce chipmaking costs.
Samsung Electronics and semiconductor equipment maker ASML are expanding their strategic partnership on High-NA extreme ultraviolet (EUV) lithography, with Samsung planning to introduce the technology into DRAM mass production by 2028 — which it says would be an industry first.
High-NA EUV is expected to extend the DRAM scaling roadmap by enabling finer circuit patterns, simpler manufacturing processes, and higher fab efficiency. By increasing numerical aperture (NA), the lithography system collects light from wider angles to produce finer details. Unlike conventional approaches that can require multiple exposures, High-NA EUV can potentially create the same pattern in a single exposure.
However, its smaller exposure area can require larger chips to be exposed in sections and stitched together. To address this, Samsung will join an industry initiative developing 12-inch photomasks, compared with the current 6-inch standard. The company expects these masks to improve fab productivity, reduce chipmaking costs, and eliminate stitching constraints.
“Samsung is committed to maintaining leadership in advanced semiconductor manufacturing, including memory and foundry, through breakthrough technologies and strong partnerships,” said Young Hyun Jun, Samsung Electronics Vice Chairman and Head of Device Solutions Division. “By further strengthening our collaboration with ASML, we are helping lay the foundation for the next generation of AI and semiconductor innovation.”
Separately, Samsung co-led Mistral AI’s €3-billion ($3.49-billion) Series D round, valuing the French AI developer at more than €21 billion. Samsung’s investment was undisclosed, though reports suggested it could reach €1 billion.
