- ST’s GaN products will be manufactured using TSMC’s GaN process technology
- GaN is a wide bandgap semiconductor material which provides benefits over traditional silicon-based semiconductors for power applications
Semiconductor leader STMicroelectronics and TSMC have teamed up to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through this collaboration, ST’s GaN products will be manufactured using TSMC’s GaN process technology.
Marco Monti, president of STMicroelectronics’ automotive and discrete group said, “As a leader in both wideband semiconductor technology and in power semiconductors for the demanding automotive and industrial markets, ST sees significant opportunity in accelerating the development and delivery of GaN process technology and bringing power GaN and GaN IC products to the market. TSMC is a trusted foundry partner that can uniquely meet the challenging reliability and roadmap evolution requirements of ST’s target customers. This cooperation complements our existing activities on power GaN undertaken at our site in Tours, France and with CEA-Leti. GaN represents the next major innovation in Power and Smart Power electronics, as well in process technology”.
Design of more compact devices
GaN is a wide bandgap semiconductor material which provides benefits over traditional silicon-based semiconductors for power applications. The benefits include greater energy efficiency at higher power that causes a substantial reduction in parasitic power losses. GaN technology also allows the design of more compact devices for better form factors.
GaN- based devices switch at speeds as much as ten times faster than silicon-based devices while operating at higher peak temperatures. This makes it suitable for adoption in automotive, industrial, telecom, and specific consumer applications across both the 100V and the 650V clusters.
Converters and chargers for hybrid and EVs
STMicroelectronics said that Power GaN and GaN IC technology-based products will enable it to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies. This includes automotive converters and chargers for hybrid and electric vehicles. ST expects the delivery of first samples of power GaN discrete devices to its key customers later this year. This will be followed by GaN IC products within a few months.
Dr. Kevin Zhang, Vice President of Business Development at TSMC said, “We look forward to collaborating with ST and bring the applications of GaN power-electronics to Industrial and Automotive Power Conversion.TSMC’s leading GaN manufacturing expertise, combined with STMicroelectronics’ product design and automotive-grade qualification capabilities, will deliver great energy efficiency improvement for industrial and automotive power conversion applications that are more eco-friendly and help accelerate the electrification of vehicles.”
