Sivers Semiconductors and SemiNex are developing next-generation InP light sources for high-speed AI data-centre interconnects, with sampling targeted for H2 2027.
Sivers Semiconductors and SemiNex have launched a $3.4 million development programme focused on next-generation indium phosphide (InP) light sources for artificial intelligence (AI) data-centre interconnects.
The programme will develop high-power external laser sources for co-packaged optics (CPO), high-channel-count distributed feedback (DFB) laser arrays for wavelength-multiplexed links, and semiconductor optical amplifier (SOA) gain stages designed to extend optical reach as channel densities increase.
As optical connectivity moves closer to compute and into chip packages, higher optical power, energy efficiency and thermal stability are becoming increasingly important. The companies aim to address these requirements through advances in InP-based light-source design and processing.
Customer sampling and initial production are targeted for the second half of 2027.
