GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70 percent energy savings compared to legacy silicon solutions
Looking to further expand into higher-power GaN markets, US-based Navitas Semiconductor has announced the opening of a new electric vehicle (EV) Design Center.
Based in Shanghai, China, the new design center hosts a highly-experienced team of world-class power system designers with comprehensive capabilities across electrical, thermal and mechanical design, software development, and complete simulation and prototyping capabilities, said the company in a statement.
EV customers will be supported worldwide by the new team, from concept to prototype, through to full qualification and mass production.
GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70 percent energy savings compared to legacy silicon solutions.
“GaN OBCs, DC-DC converters and traction inverters are estimated to extend EV range or reduce battery costs by 5 percent, and to accelerate adoption of EVs worldwide by 3 years. An EV-upgrade to GaN is estimated to reduce road-sector CO2 emissions by 20 percent per year by 2050, the target of the Paris Accord,” the company said in the statement.
Hao SUN, the new Senior Director of the Shanghai Design Center, said “The design center will develop schematics, layouts, and firmware for full-function, productizable EV power systems. Navitas will work in partnership with OBC, DC-DC and traction system companies to create innovative, world-class solutions with the highest power density and highest efficiency to propel GaN into mainstream eMobility.”
“The Navitas EV team has rich talent and proven experience delivering power systems,” said Charles ZHA, VP and GM of Navitas China. “EMobility is an exciting expansion market for GaN, with an estimated $250 potential content per EV. Market-by-market, Navitas is making swift progress into higher-power applications, like EV, data center and solar.”
Manufacturing a GaN power IC has up to a 10x lower CO2 footprint than for a silicon chip. Considering use-case efficiency and material size and weight benefits, each GaN power IC shipped can save an estimated 4 kg of CO2. Overall, GaN is expected to address a 2.6 Gton/yr reduction in CO2 emissions by 2050.
