RIR Power Electronics has installed SiC epitaxial wafer reactors at its ₹618-crore Odisha facility, taking a key step towards domestic power semiconductor manufacturing.
RIR Power Electronics has completed installation of silicon carbide (SiC) epitaxial wafer manufacturing reactors at its semiconductor facility in Bhubaneswar, Odisha. The company has also commissioned the power connections, utilities, and supporting infrastructure required for SiC epitaxial wafer manufacturing.
Commercial production is expected to begin after the remaining statutory and regulatory formalities are completed. The facility is planned to produce SiC epitaxial wafers for domestic and international markets.
RIR Power Electronics is developing the facility as a vertically integrated SiC semiconductor manufacturing facility with a planned investment of ₹618 crore. It is expected to eventually manufacture SiC-based power semiconductor devices, including high-power MOSFETs, diodes, and modules.
These devices are intended for electric mobility, renewable energy, energy storage, railways, aerospace, defence, data centres, and industrial power electronics. SiC can offer higher energy efficiency and power-handling capabilities than conventional silicon, while reducing power losses and supporting higher operating temperatures and faster switching.
The company describes the epitaxial process as the first step in its planned “Silicon Carbide to System” manufacturing approach, covering epitaxial wafers, power semiconductor devices, and eventually system-level solutions.
Following the announcement, RIR Power Electronics’ share price rose 10.55% to ₹199.10. Its standalone Q1 June 2026 net profit rose 80.46% year-on-year to ₹3.14 crore, while net sales increased 29.27% to ₹27.16 crore.
