In October, Samsung announced its plans to develop new 3D structures for sub-10-nanometer DRAM.
Samsung, leading memory chip manufacturer, has established a new research laboratory in the United States dedicated to the development of advanced three-dimensional dynamic random access memory (3D DRAM) technology. This lab, functioning under the umbrella of Device Solutions America (DSA) based in Silicon Valley, is tasked with the creation of an upgraded DRAM model.
In October, Samsung announced its plans to develop new 3D structures for sub-10-nanometer DRAM, which would enable the production of chips with significantly larger capacities, potentially exceeding 100 gigabits.
Samsung’s venture into 3D memory technology is not new; the company achieved a significant milestone in 2013 by being the first in the industry to commercialise 3D vertical NAND flash memory chips.
Despite Samsung’s advancements in technology, the global semiconductor industry faced challenges in 2023, with an 8.8 percent decrease in revenue. This decline was due to reduced spending in both enterprise and consumer segments.
Thankfully, artificial intelligence (AI) emerged as a silver lining, providing a boost to the semiconductor industry, particularly in the latter half of the year. AI has become a crucial driver of content and revenue within the sector.
Mirroring the industry trend, Samsung experienced a downturn in its revenue due to the slowdown in the memory market. The company reported a 38% year-over-year decline in revenue, affected primarily by the DRAM and NAND segments. Factors contributing to this decline included softened demand in key markets like PCs, servers, and smartphones, as well as issues related to oversupply and excess inventory in the market.
