The agreement will also offer Magnachip access to Navitas’ SiC supply chain and materials ecosystem
Navitas Semiconductor Corporation has signed a partnership agreement with Magnachip Semiconductor Corporation. The agenda behind this collaboration is to increase adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications.
Under this collaboration, Magnachip will offer a license to Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology. This initiative will enable it to enter the HV and UHV SiC markets with devices rated at 1200 V, 2300 V, 3300 V and higher voltages.
The agreement will also offer Magnachip access to Navitas’ SiC supply chain and materials ecosystem to support faster commercialisation. The companies plan to port, qualify, and internalise the licensed technology at Magnachip’s semiconductor fabrication facility in South Korea.
The licensed SiC technologies are intended for next-generation power conversion applications, including energy and grid infrastructure, energy storage systems, industrial electrification, automotive platforms, and other high-power applications.
Beyond silicon carbide, the companies said the agreement includes plans for broader collaboration, with additional partnership initiatives expected to be announced at a later stage.
“This strategic partnership with Magnachip reflects our long-term vision to broaden GeneSiC adoption across high-voltage and ultra-high-voltage power markets,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “By licensing our proven GeneSiC technologies and supporting Magnachip through our supply-chain and materials ecosystem, we are creating a path to scale advanced SiC solutions more rapidly while enabling a deeper, long-term collaboration between our companies.”
Chae Lee, Chief Executive Officer of Magnachip Semiconductor, said the agreement marks the company’s entry into the high-voltage and ultra-high-voltage SiC market. He added that integrating GeneSiC technology with Magnachip’s existing MOSFET and power semiconductor portfolio will strengthen its ability to deliver higher-efficiency, higher-voltage, and more reliable power conversion solutions.
